340 GHz固定调谐分谐波混频器

基于最新研制的小阳极结反向并联肖特基二极管芯片，设计和制造了320~360 GHz固定调谐分谐波混频器。混频器的结构采用的是传统电场（E）面腔体剖分式结构:将二极管芯片倒装焊粘在石英基片上，再用导电银胶将石英电路悬置粘结在混频器下半个腔体上。电路设计采用场路相结合的方法:用场仿真软件建立混频电路各个功能单元的S参数模型，将它们代入非线性电路仿真软件中与二极管结相结合进行混频器性能整体仿真优化。最终测试结果表明，谐波混频器的双边带在4~6 mW的本振功率驱动下，在320~360 GHz超过12%带宽范围内，双边带变频损耗均小于9 dB；混频器在310~340 GHz频带范围内，双边带噪声温度最低为780 K。声温度最低为780 K。

A fixed-tuned 340 GHz sub-harmonic mixer

The design and fabrication of a fixed-tuned 320-360 GHz sub-harmonic mixer, featuring a newly developed small anode junction anti-parallel pair of planar Schottky diodes chip, are presented. A traditional E-plane split-block waveguide architecture was adopted in the mixer's design: the diodes chip was flip-chipped onto a quartz-based microstrip circuit and suspendedly glued to the bottom half of an equally split waveguide block with silver epoxy. A method of combination of field and circuit was applied to simulate and optimize the performance of the mixing circuit. Every functioning part of the mixing circuit was calculated with field simulating software to create its own S-parameters package, which was then combined with the diodes' barriers to be used by nonlinear circuit simulating software to simulate and optimize the performance of the mixer. The final test indicates that the ndicates that the mixer's double side band (DSB) conversion losses were lower than 9 dB, over 12% of bandwidth (320-360 GHz), with 4-6 mW of local oscillator (LO) power input; and at room temperature a minimum DSB equivalent noise temperature of 780 K was measured for RF frequency between 310 GHz and 340 GHz.