基于不同晶粒尺寸的PVDZnSe红外光学材料制备工艺研究

ZnSe以其优异的光学性能与机械性能，一直是光学零件的首选材料之一。光学窗口、光学透镜等光学零件的制作成本很大程度上取决于光学材料的可加工性，加工成本占制作总成本的50%以上。从微观结构上来看，光学晶体材料的可加工性又与晶粒尺寸相关。文中采用物理气相沉积（PVD）法制备了PVDZnSe红外光学材料，并从沉积温度与原料性能两个方面研究了PVDZnSe制备工艺对其晶粒尺寸和可加工性的影响。研究表明:在920、960、1 000 ℃三个温度条件下，随着沉积温度升高，PVDZnSe材料晶粒呈现增加的趋势，其尺寸范围分别为20~180 μm、300~2000 μm和1 200~2 800 μm。在相同工艺参数条件下，选用粒径分别为2~10 μm、10~20 μm和300~2 000 μm的三种ZnSe原料制备PVDZnSe。随着原料ZnSe晶粒尺寸的增加，所得PVDZnSe的晶粒尺寸显著增大。结果表明，随着晶粒尺寸增加，脆性指数也相应增加，即PVDZnSe可加工性能在逐渐变差。研究还发现，在一定的晶粒尺寸范围内，材料的透过率差别不大，在2~14 μm波长范围内，PVDZnSe材料的平均透过率均能达到70%以上。该研究为PVDZnSe材料在光学零件领域的应用提供了实践经验和有力的技术支撑。

Study of preparation process of PVDZnSe infrared optical materials based on different grain sizes

ZnSe has always been one of the preferred materials for optical parts due to its excellent optical and mechanical properties. The manufacturing cost of optical parts such as optical windows and optical lenses largely depends on the machinability of optical materials, and processing costs account for more than 50% of the total manufacturing costs. The machinability of optical materials is related to the grain size. In this paper, the physical vapour deposition (PVD) method was employed to prepare PVDZnSe infrared optical materials, and the influence of the PVDZnSe preparation process on its grain size and machinability was investigated from the aspects of deposition temperature and raw material properties. It was demonstrated that under the three temperature conditions of 920 ℃, 960 ℃ and 1000 ℃, with the higher deposition temperature, the grain size of the PVDZnSe material showed an increasing trend, and the size ranges were 20-180 μm, 300-2000 μm and 1200-2800 μm, respectively. Under the same process parameters, the PVDZnSe materials were prepared from three different ZnSe raw materials with particle diameters of 2 -10 μm, 10-20 μm and 300-2000 μm. With the increase in grain size of the ZnSe raw materials, the grain size also increased. The results show that the grain size of the obtained PVDZnSe increases significantly, and the brittleness index also increases, which indicates that the machinability of PVDZnSe gradually worsens. The study also found that the influence of grain size on the transmittance of the PVDZnSe material is not significant. The average transmittance of the PVDZnSe material can reach more than 70% in the wavelength range of 2-14 μm. This study provides practical experience and technical support for the application of PVDZnSe optical parts.