Diode structures from amorphous low-temperature GaAs |
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Authors: | C S Kyono B Tadayon M E Twigg A Giordana D S Simons M Fatemi S Tadayon |
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Affiliation: | (1) Code 6856, Naval Research Laboratory, 20375 Washington, DC;(2) National Institute of Standards and Technology, 20899 Gaithersburg, MD;(3) COMSAT Laboratory, 20871 Clarksburg, MD |
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Abstract: | The effect of annealing on the electrical properties of a GaAs diode structure, which incorporated a nominally undoped low-temperature
(LT) layer on top of conventionally grown p-type GaAs, is examined. Unannealed GaAs grown by molecular beam epitaxy at substrate
temperatures below 250°C is amorphous and highly resistive. Annealing at high temperatures converts the undoped LT-GaAs from
amorphous to single crystal material. The annealed material is n-type. The current-voltage characteristics of the LT on p-type
GaAs structures showed greater asymmetry, with lower reverse leakage currents, as the anneal temperature was increased above
400°C. This reflects the improved crystal quality of the LT layer. |
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Keywords: | Annealing low-temperature-grown GaAs MBE |
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