Electrical and optical properties of indium tin oxide films prepared on plastic substrates by radio frequency magnetron sputtering |
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Authors: | Chih-hao Yang Shih-chin Lee Suz-cheng Chen |
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Affiliation: | a Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan, ROC b Department of Electrical Engineering, Kun Shan University, Tainan, Taiwan, ROC |
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Abstract: | The influence of deposition power, thickness and oxygen gas flow rate on electrical and optical properties of indium tin oxide (ITO) films deposited on flexible, transparent substrates, such as polycarbonate (PC) and metallocene cyclo-olefin copolymers (mCOC), at room temperature was studied. The ITO films were prepared by radio frequency magnetron sputtering with the target made by sintering a mixture of 90 wt.% of indium oxide (In2O3) and 10 wt.% of tin oxide (SnO2). The results show that (1) average transmission in the visible range (400-700 nm) was about 85%-90%, and (2) ITO films deposited on glass, PC and mCOC at 100 W without supplying additional oxygen gas had optimum resistivity of 6.35 × 10−4 Ω-cm, 5.86 × 10−4 Ω-cm and 6.72 × 10−4 Ω-cm, respectively. In terms of both electrical and optical properties of indium tin oxide films, the optimum thickness was observed to be 150-300 nm. |
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Keywords: | Indium tin oxide (ITO) Resistivity Optical properties Physical vapor deposition (PVD) |
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