Structural properties of GaN and related alloys grown by radio-frequency magnetron sputter epitaxy |
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Authors: | Hiroyuki Shinoda Nobuki Mutsukura |
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Affiliation: | Department of Electronic Engineering, School of Engineering, Tokyo Denki University 2-2 Kanda-Nishiki-cho, Chiyoda-ku, Tokyo 101-8457, Japan |
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Abstract: | Single-crystalline layers of GaN and related alloys such as AlGaN and InGaN were grown on Al2O3 (0001) substrates by radio-frequency magnetron sputter epitaxy. The crystalline structures of these layers were studied as functions of substrate temperature, N2 composition ratio in N2/Ar mixture source gas and gas pressure during the growth. Surface structure of GaN layer depended on Ga/N ratio in flux density, and nitrogen-rich growth condition resulted in pyramid-type facet structure whereas Ga-rich growth produced flat surface. The crystalline quality of GaN layer improved at relatively low N2 composition ratios, and the GaN layer grown at 30% N2 condition was transparent and colorless. AlxGa1−xN layers with x = 0.06-0.08 and InxGa1−xN layers with x = 0.45-0.5, were obtained at 30-40% and 30-50% N2 composition ratios, respectively. The AlN and InN molar fractions in these layers were considerably different from Al and In molar fractions in starting metal alloys (x = 0.15 in both AlxGa1−x and InxGa1−x alloys). |
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Keywords: | Gallium nitride (GaN) Aluminum gallium nitride (AlGaN) Indium gallium nitiride (InGaN) Epitaxy Sputtering Structural properties Surface morphology |
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