Room-temperature growth of AlN/TiN epitaxial multi-layer by laser molecular beam epitaxy |
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Authors: | Wakana Hara Jin Liu Sei Otaka Keisuke Saito |
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Affiliation: | a Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-R3-6 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan b Bruker AXS K.K., 3-9-A, Moriya-cho, Kanagawa-ku, Yokohama 221-0022, Japan |
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Abstract: | We have fabricated epitaxial AlN thin films at room temperature on sapphire (0001) substrates with a TiN (111) epitaxial buffer layer by pulsed laser deposition in ultra-high vacuum (laser molecular beam epitaxy method). The TiN buffer layers were also fabricated at room temperature. Four-circle X-ray diffraction analysis and reflection high-energy electron diffraction results indicate the heteroepitaxial structure of AlN (0001)/TiN (111)/sapphire (0001) with the epitaxial relationship of AlN [10-10]||TiN [11-2]||sapphire [11-20]. The surface of the room-temperature grown AlN film was found to be atomically flat, reflecting the nano-stepped surface of ultrasmooth sapphire substrates. Then, we could achieve the room-temperature epitaxial growth of [AlN/TiN] multi-layer. The temperature dependence of resistivity of the AlN/TiN multi-layer film was also measured. |
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Keywords: | AlN TiN Room temperature epitaxial growth Pulsed laser deposition Ultrasmooth surface |
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