Growth of ZnO layers for transparent and flexible electronics

We have deposited and characterised ZnO on flexible and transparent plastic polymer. We employed a specially designed vapour phase growth system with elemental sources for zinc and oxygen and deposited thin ZnO films at temperatures below 400 °C. Basic photoluminescence characterisation confirms ZnO. Ohmic contacts were fabricated on these layers and the layers exhibit significantly high electron concentration with carrier mobility μ of up to 10.78 cm² V⁻¹ s⁻¹. Furthermore, we show how these layers can be processed with conventional device processing techniques.