Properties of aluminum oxide thin films deposited by pulsed laser deposition and plasma enhanced chemical vapor deposition |
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Authors: | C. Cibert H. Hidalgo C. Champeaux P. Tristant C. Tixier J. Desmaison A. Catherinot |
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Affiliation: | SPCTS UMR-CNRS no. 6638, Faculté des Sciences et Techniques, 123 avenue A. Thomas, 87060 Limoges Cedex, France |
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Abstract: | The chemical, structural, mechanical and optical properties of thin aluminum oxide films deposited at room temperature (RT) and 800 °C on (100) Si and Si-SiO2 substrates by pulsed laser deposition and plasma enhanced chemical vapor deposition are investigated and compared. All films are smooth and near stoichiometric aluminum oxide. RT films are amorphous, whereas γ type nano-crystallized structures are pointed out for films deposited at 800 °C. A dielectric constant of ∼ 9 is obtained for films deposited at room temperature and 11-13 for films deposited at 800 °C. Young modulus and hardness are in the range 116-254 GPa and 6.4-28.8 GPa respectively. In both cases, the results show that the deposited films have very interesting properties opening applications in mechanical, dielectric and optical fields. |
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Keywords: | Aluminum oxide PECVD PLD Thin films properties |
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