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Neutron transmutation doping of silicon 30Si monoisotope with phosphorus |
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| Authors: | A. N. Ionov P. G. Baranov B. Ya. Ber A. D. Bulanov O. N. Godisov A. V. Gusev V. Yu. Davydov I. V. Il’in A. K. Kaliteevskiĭ M. A. Kaliteevskiĭ A. Yu. Safronov I. M. Lazebnik H. -J. Pohl H. Riemann N. V. Abrosimov P. S. Kop’ev |
| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia;(2) TsENTROTEKh Research and Technology Center, St. Petersburg, Russia;(3) Konstantinov Institute of Nuclear Physics, Russian Academy of Sciences, Gatchina, Leningrad oblast, Russia;(4) VITCON Projectconsult GmbH, D-07745 Jena, Germany;(5) Leibniz Institute of Crystal Growth, Berlin, Germany;(6) Institute for Chemistry of High-Purity Substances, Russian Academy of Sciences, Nizhni Novgorod, Russia |
| Abstract: | Phosphorus-doped silicon 30Si monoisotope samples with a highly homogeneous impurity distribution at a concentration of 5 × 1016 cm?3 were obtained for the first time by means of neutron transmutation doping. |
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