Growth and characterization of some I–III–VI2 compound semiconductors |
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| Authors: | K Balakrishnan B Vengatesan P Ramasamy |
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| Affiliation: | (1) Crystal Growth Centre, Anna University, 600 025 Madras, India |
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| Abstract: | Single crystals of CulnS2, CulnSe2, CulnTe2, CuGaS2, AgGaS2 CulnSSe, AgGaSSe have been grown by chemical vapour transport technique on the basis of a new general thermodynamical model which enables the minimum source temperature T
s, and the minimum deposition temperature, T
d, to be determined. X-ray analysis, X-ray photoelectron spectroscopic analysis, surface analysis, and microhardness studies have been carried out on the single crystals grown. |
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