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Ge nano-layer fabricated by high-fluence low-energy ion implantation |
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| Authors: | Tiecheng Lu Shaobo Dun Qiang Hu Songbao Zhang Zhu An Yanmin Duan Sha Zhu Qiangmin Wei Lumin Wang |
| Affiliation: | aDepartment of Physics, Key Laboratory for Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China bInternational Center for Material Physics, Chinese Academy of Sciences, Shenyang 110015, China cInstitute of Nuclear Science and Technology, Key Laboratory for Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China dDepartment of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109, USA |
| Abstract: | A Ge nano-layer embedded in the surface layer of an amorphous SiO2 film was fabricated by high-fluence low-energy ion implantation. The component, phase, nano-structure and luminescence properties of the nano-layer were studied by means of Rutherford backscattering, glancing incident X-ray diffraction, laser Raman scattering, transmission electron microscopy and photoluminescence. The relation between nano-particle characteristics and ion fluence was also studied. The results indicate that nano-crystalline Ge and nano-amorphous Ge particles coexist in the nano-layer and the ratio of nano-crystalline Ge to nano-particle Ge increases with increasing ion fluence. The intensity of photoluminescence from the nano-layer increases with increasing ion fluence also. Prepared with certain ion fluences, high-density nano-layers composed of uniform-sized nano-particles can be observed. |
| Keywords: | Ge nano-layer Ion implantation Laser Raman scattering Photoluminescence Transmission electron microscopy X-ray diffraction |
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