| PCVD在狭缝内壁沉积Ti-Si-N薄膜的研究 |
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| 引用本文： | 马青松,马胜利,徐可为. PCVD在狭缝内壁沉积Ti-Si-N薄膜的研究[J]. 真空科学与技术学报, 2004, 24(4): 293-295,298 |
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| 作者姓名： | 马青松 马胜利 徐可为 |
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| 作者单位： | 西安交通大学金属材料强度国家重点实验室,西安,710049 |
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| 基金项目： | 国家高技术研究发展计划(863计划)，国家自然科学基金，高等学校博士学科点专项科研项目 |
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| 摘 要： | 用脉冲直流等离子体辅助化学气相沉积(PCVD)设备在狭缝的侧壁上沉积Ti-Si-N薄膜.经微观物相分析发现,在狭缝的侧壁上随着测试深度的增加,薄膜中Ti元素逐渐减少,Si含量增加,薄膜的相组成始终为nc-TiN/Si3N4.利用球痕法测定了各深度处薄膜的厚度,显微硬度仪测试了侧壁上深度不同位置处薄膜显微硬度.实验结果表明,随测试深度增加,薄膜厚度和显微硬度下降.
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| 关 键 词： | PCVD Ti-Si-N 复杂型腔 模具 |
| 文章编号： | 1672-7126(2004)04-0293-03 |
Ti-Si-N Coating on Slit Inner Walls by Plasma Enhanced Chemical Vapor Deposition |
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| Ma Qingsong,Ma Shengli and Xu Kewei. Ti-Si-N Coating on Slit Inner Walls by Plasma Enhanced Chemical Vapor Deposition[J]. JOurnal of Vacuum Science and Technology, 2004, 24(4): 293-295,298 |
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| Authors: | Ma Qingsong Ma Shengli Xu Kewei |
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| Affiliation: | Ma Qingsong,Ma Shengli and Xu Kewei * |
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| Abstract: | Ti-Si-N films were coated on inner walls of a 3 mm wide slit of high speed steel (HSS) by pulsed d.c. plasma enhanced chemical vapor deposition (PCVD) to simulate film growth on surfaces of moulds and dies with complicated geometry.The coating were studied with X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS).We observed that as the measured spot goes deeper down the slit,the film thickness,its micro-hardness as well as the Ti content decrease,but the Si content increases.The results show that crystalline TiN nano-particles coexist with amorphous Si 3N 4 throughout the films. |
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| Keywords: | PCVD Ti-Si-N Complex-shaped surface Mould |
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