Mechanisms of strain induced roughening and dislocation multiplication in SixGe1-xthin films |
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Authors: | D. E. Jesson K. M. Chen S. J. Pennycook T. Thundat R. J. Warmack |
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Affiliation: | (1) Solid State Division, Oak Ridge National Laboratory, 37831-6030, TN;(2) Health Sciences Research Division, Oak Ridge National Laboratory, 37831-6123, TN |
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Abstract: | We discuss the stress driven roughening transition of SixGe1-x thin films. In the case of annealed films, nucleation effects dominate the nature of the surface ripple which formed by a cooperative nucleation mechanism. Individual islands appear to nucleate via multilayer fluctuations. Faceting can however be suppressed at high supersaturations, resulting in a transition with characteristics of the Asaro-Tiller-Grinfeld instability. The relationship between morphological evolution and dislocation nucleation and multiplication is considered. |
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Keywords: | Heteroepitaxy interface roughening SiGe |
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