Pressure dependence of the Raman-active modes in Bi4Ti3O12 |
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| Affiliation: | 1. Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito exterior, Ciudad Universitaria, Coyoacán, Ciudad de México, Mexico, 04510;2. Instituto de Investigación en Metalurgia y Materiales, Universidad Michoacana de San Nicolás de Hidalgo (UMSNH), Fco. J. Mújica S/N, Col. Felícitas del Río, Morelia, Mich. 58030, Mexico;1. GREMAN, UMR 7347, Université de Tours, CNRS, Parc de Grandmont, 37200 Tours, France;2. ICMN, UMR7374, Université d''Orléans, CNRS, Rue de la Férollerie, 45071 Orléans, France;3. Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, Jülich 52425, Germany;4. CEMES CNRS, 29 Rue Jeanne Marvig, F-31055 Toulouse, France;5. Université de Toulouse, 29 Rue Jeanne Marvig, F-31055 Toulouse, France |
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| Abstract: | Bismuth titanate (Bi4Ti3O12), a layer-type ferroelectric material crystallizing in the monoclinic system, has been investigated by high-pressure Raman technique up to 17 GPa in a diamond anvil cell. A pressure-induced phase transition occurs near 3 GPa, and the softening of the lowest Raman mode near 31 cm−1 seems to be associated with this transition. Furthermore, the Raman data as well as absorption measurements indicate that a second phase transition occurs near 11 GPa. This transition may be due to a change from the ferroelectric to the paraelectric phase under the influence of pressure. |
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