Lifetime measurement of the 28Si compound state at 13.095 MeV by the blocking effect |
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| Affiliation: | 1. Iran Polymer and Petrochemical Institute, P.O. Box 14965-115, Tehran, Iran;2. Eastern Michigan University, Coatings Research Institute, Ypsilanti, MI, United States;1. Centre of Micro/Nano Manufacturing Technology (MNMT-Dublin), School of Mechanical & Materials Engineering, University College Dublin, Dublin 4, Ireland;2. State Key Laboratory of Precision Measuring Technology and Instruments, Laboratory of Micro/Nano Manufacturing Technology (MNMT), Tianjin University, Tianjin 300072, China;1. National Engineering Lab for TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, People''s Republic of China;2. Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, United Kingdom;1. Lake Group, Department of Ecoscience and Arctic Research Centre, Aarhus University, Denmark;2. WATEC Aarhus University Centre for Water Technology, Aarhus University, Denmark;3. Department of Aquatic Ecology and Environmental Biology, Radboud Institute for Biological and Environmental Sciences (RIBES), Radboud University, Nijmegen, the Netherlands;1. National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824, USA;2. Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824, USA;3. Institut für Kernphysik der Universität zu Köln, D-50937 Köln, Germany;4. Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;5. Joint Institute for Nuclear Astrophysics, Michigan State University, East Lansing, MI 48824, USA;6. Department of Physics, University of York, Heslington, York YO10 5DD, United Kingdom;7. Institut für Kernphysik, Technische Universität Darmstadt, 64289 Darmstadt, Germany;8. Department of Physics, Central Michigan University, Mount Pleasant, MI 48859, USA;1. Institute for Nuclear Physics, University of Cologne, Zülpicher Straße 77, D-50937 Cologne, Germany;2. Faculty of Physics, University of Sofia, BG-1164 Sofia, Bulgaria;3. Institute for Nuclear Research and Nuclear Energy INRNE, Bulgarian Academy of Sciences, BG-1784 Sofia, Bulgaria |
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| Abstract: | The 〈110〉 axial and (111) planar blocking dips in an Al crystal are used to measure the lifetime of the state at 13.095 MeV in the compound nucleus 28Si excited by the 27Al(p, α)24Mg reaction at Ep = 1565 keV. The blocking dips for 2.12 MeV α particles from this reaction at Ep = 1183.4 keV are also measured and the radiation damage in the crystal is investigated. Monte Carlo simulations and analytical methods in the axial blocking measurement and analytical methods in the planar blocking case are used. The measured lifetime at the Ep = 1565 keV resonance, τ = 15 ± 2 as, is in good agreement with the value derived from the reaction-yield measurement. |
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