The structure identification of epitaxial Ru2Si3 on (111) Si |
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| Affiliation: | 1. LFoundry s.r.l. Avezzano, Italy;2. Fondazione Bruno Kessler, Trento, Italy;3. Axcelis Technologies Srl, Agrate Brianza, Italy;1. Université de Sfax, ENIS, Laboratoire Analyse, Valorisation et Sécurité des Aliments, Sfax, 3038, Tunisia;2. Department of Chemical Sciences, University of Naples “Federico II”, Complesso Universitario Monte S. Angelo, Via Cintia 4, 80126, Naples, Italy;3. Univ Lyon, Université Claude Bernard Lyon 1, ISARA Lyon, Laboratoire BioDyMIA (Bioingénierie et Dynamique Microbienne aux Interfaces Alimentaires), Equipe Mixte d’Accueil n°3733, IUT Lyon 1, technopole Alimentec, Rue Henri de Boissieu, 01000, Bourg en Bresse, France;1. The School of Mathematics and Physics, Lanzhou Jiaotong University, Lanzhou 730070, PR China;2. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, PR China;3. Department of Physics, Nanjing Normal University, Nanjing 210023, PR China;4. Department of Physics, LanZhou University, Lanzhou 730000, PR China;1. Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China;2. Department of Physics and Astronomy, Hicks Building, University of Sheffield, Sheffield S3 7RH, United Kingdom;3. Beijing Radiation Center, Beijing 100875, China;1. Nanostech Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India;2. Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India;3. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452001, Madhya Pradesh, India;4. Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India;5. Institute of Ion Beam Physics & Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany |
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| Abstract: | Epitaxial Ru2Si3 has been successfully grown on (111) Si for the first time by using the new method of chemical electroless plating of Ru thin film on silicon with subsequent annealing schemes. The crystal structure of Ru2Si3 reported in the literature, which was identified by X-ray diffraction, was ambiguous to be tetragonal or orthorhombic. The study of stereomicroscopy and Kikuchi lines of the Ru2Si3 by scanning transmission electron microscopy shows that the structure of Ru2Si3 is orthorhombic with four-fold like symmetry rather than tetragonal. |
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