| ICP腔体压力对直流偏压的影响 |
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| 引用本文： | 张力江,幺锦强,周俊,王敬松.ICP腔体压力对直流偏压的影响[J].半导体技术,2010,35(8):794-796. |
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| 作者姓名： | 张力江 幺锦强 周俊 王敬松 |
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| 作者单位： | 河北半导体研究所,石家庄,050051;河北半导体研究所,石家庄,050051;河北半导体研究所,石家庄,050051;河北半导体研究所,石家庄,050051 |
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| 摘 要： | 基于GaAs器件干法刻蚀工艺,介绍感应耦合等离子(ICP)的刻蚀原理,以Cl2和BCl3为刻蚀气体,研究分析了在GaAs表面刻蚀工艺中不同的腔体压力下设备直流偏压的变化情况.发现在各种不同的功率下都存在一个特定的腔体压力,当低于该腔体压力时直流偏压会随腔体压力的增大而增加,当高于该腔体压力后直流偏压会随着腔体压力的增加而缓慢减小.讨论了产生这种现象的原因,揭示了其中的物理机理,以该方法作为参考,通过一组对比实验在工艺中得到验证,给出了GaAs刻蚀的工艺条件,为刻蚀工艺条件的优化提供了一个参考.
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| 关 键 词： | 感应耦合等离子体 直流偏压 腔体压力 干法刻蚀 砷化镓刻蚀 |
Chamber Pressure Influence on DC Bias in ICP System |
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| Zhang Lijiang,Yao Jinqiang,Zhou Jun,Wang Jingsong.Chamber Pressure Influence on DC Bias in ICP System[J].Semiconductor Technology,2010,35(8):794-796. |
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| Authors: | Zhang Lijiang Yao Jinqiang Zhou Jun Wang Jingsong |
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| Affiliation: | Zhang Lijiang,Yao Jinqiang,Zhou Jun,Wang Jingsong(Hebei Semiconductor Research Institute,Shijiazhuang 050051,China) |
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| Abstract: | The theory of inductive couple plasma(ICP) is introduced based on GaAs dry etching.The relationship between the chamber pressure and DC bias in ICP system with gas Cl2 and BCl3 in process is studied.DC bias increases with the increase of chamber pressure when below the specifically pressure,with the chamber pressure continue increase,DC bias will decrease slowly.The results at several different RF power process were got.After analyzing the phenomena,the physical reason was given.From an experiment,suitable ... |
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| Keywords: | ICP DC bias chamber pressure dry etching GaAs etching |
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