InAs flip-chip LEDs with InGaAsSb buffer layers |
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| Authors: | N. V. Zotova N. D. Il’inskaya S. A. Karandashev B. A. Matveev M. A. Remennyĭ N. M. Stus’ V. V. Shustov N. G. Tarakanova |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia;(2) Ioffe LED, Ltd., St. Petersburg, 194021, Russia |
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| Abstract: | ![]()
Under study are the electrical and optical properties of n-InGaAsSb epitaxial layers with composition close to InAs and lattice-matched with it, fabricated on InAs substrates by LPE from Te-containing melts. The layers are transparent in the 3-μm range owing to the Moss-Burstein effect. The light-current characteristics and near-field emission pattern of InAs-based flip-chip LEDs with the emission extracted through n +-InGaAsSb layers are presented and discussed. |
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