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Photopatternable High-k Polysilsesquioxane Dielectrics for Organic Integrated Devices: Effects of UV Curing on Chemical and Electrical Properties |
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| Authors: | Heqing Ye Eunji Park Su Cheol Shin G Murali Daehyun Kim Jihoon Lee In Ho Kim Sung-Jin Kim Se Hyun Kim Yong Jin Jeong Insik In |
| Affiliation: | 1. School of Electrical Engineering and Automation, Changshu Institute of Technology, Changshu, 215500 P. R. China
Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan, 38541 Republic of Korea;2. Department of IT⋅Energy Convergence (BK21 FOUR), Korea National University of Transportation, Chungju, 27469 Republic of Korea;3. Chemical Industry Institute, Korea National University of Transportation, Chungju, 27469 Republic of Korea;4. Department of IT⋅Energy Convergence (BK21 FOUR), Korea National University of Transportation, Chungju, 27469 Republic of Korea Chemical Industry Institute, Korea National University of Transportation, Chungju, 27469 Republic of Korea Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju, 27469 Republic of Korea;5. Department of Materials Science and Engineering, Korea National University of Transportation, Chungju, 27469 Republic of Korea;6. College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, 28644 Republic of Korea;7. Division of Chemical Engineering, Konkuk University, Seoul, 05029 Republic of Korea |
| Abstract: | Polysilsesquioxanes (PSQs) have generated great interest as solution-processable inorganic polymers for obtaining high-dielectric-constant (k) dielectrics. Engineering the side chains in PSQs can enhance the polarization characteristics and provide different functionalities, such as photopatternability and ferroelectric performance. In this study, two types of UV curable high-k PSQs are prepared by introducing epoxy-containing side chains to the PSQs: 1) glycidyl epoxy-containing linear groups and 2) bulky cycloaliphatic epoxy-containing groups. The physical, chemical, and electrical properties of these two materials after UV curing are investigated. Both PSQ films show high dielectric strength and are successfully patterned after exposure to UV light. The structure of the side chains influences the UV curing behavior and capacitance characteristics of the PSQ dielectrics. These differences determine the driving behavior of the fabricated organic thin-film transistors, which exhibits either stable or ferroelectric operation. Finally, logic gates and memory cells exhibiting low-voltage and non-destructive operations are successfully integrated using UV cured PSQs. This approach for engineering PSQs with the purpose of achieving desirable photopatternability and high dielectric or ferroelectric performance can be used to realize simple and inexpensive solution-processing techniques for next generation integrated electronics. |
| Keywords: | gate dielectrics high dielectric constant logic gates low-voltage operation memory device cells polysilsesquioxanes |