Electret Molecular Configuration Induced Programmable Photonic Memory for Advanced Logic Operation and Data Encryption

Nonvolatile organic photonic transistor (OPT) memories have attracted widespread attention due to their nondestructive readout, remote controllability, and robust tunability. Developing electrets with similar molecular structures but different memory behaviors and light-responsive features is crucial for light-wavelength-modulated data encryption. However, reported OPT memories have yet to meet this challenge. Here a new electret molecule (“H-PDI”) is developed via reconfiguring the linear perylene diimide molecule (“L-PDI”) to a helical shape. Respectively incorporating H-PDI and L-PDI into the floating gate layer results to H-PDI OPT and L-PDI OPT. Attributing to their remarkably different electronic structures and energy bandgaps, H-PDI OPT and L-PDI OPT preferably respond to 405 and 532 nm light irradiation, respectively. Upon electrical programming, data can be written and stored in both memories with good retention features and a high “1”/“0” state current ratio over 10⁵, though the data can only be erased by light with correct wavelengths, rather than the electrical field. Moreover, data stored in a memory array consisting of both H-PDI OPT and L-PDI OPT can only be read out by correct inputs, and wrong inputs will lead to highly deceptive outputs. This study provides a general design strategy of OPT for advanced data encryption and protection.