Fast short-circuit protection under current imbalance condition for multi-paralleled SiC-MOSFETs |
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Authors: | Hiroshi Suzuki Tsuyoshi Funaki |
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Affiliation: | 1. Research and Development Group, Hitachi, Ltd., Hitachi, Ibaraki, Japan;2. Electronic and Infocommunications Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka, Japan |
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Abstract: | This paper proposes methodology and gate drive circuit that can immediately detect short-circuit (SC) of multiparalleled SiC-MOSFETs even under current imbalance condition. Proposed method detects SC current using an integration circuit that can sense di/dt. The detection level of SC current can be adjusted to a desired value regardless of the number of SiC-MOSFETs connected in parallel. The effectiveness of the proposed approach was experimentally validated for four-paralleled SiC-MOSFETs under extreme current imbalance in SC condition. SC was detected within 0.5 μs and all SiC-MOSFETs were protected without destruction at most 2.2 μs after the onset of SC, for all types of SC 1, 2, and 3. |
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Keywords: | current imbalance fast current detection multi-parallel dies short-circuit SiC-MOSFET |
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