首页 | 本学科首页   官方微博 | 高级检索  
     


Breaking the Responsivity-Bandwidth Trade-Off Limit in GaN Photoelectrodes for High-Response and Fast-Speed Optical Communication Application
Authors:Shi Fang  Liuan Li  Danhao Wang  Wei Chen  Yang Kang  Weiyi Wang  Xin Liu  Yuanmin Luo  Huabin Yu  Haochen Zhang  Muhammad Hunain Memon  Wei Hu  Jr-Hau He  Chen Gong  Chengjie Zuo  Sheng Liu  Haiding Sun
Affiliation:1. School of Microelectronics, University of Science and Technology of China, Hefei, 230026 P. R. China;2. Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230026 P. R. China;3. Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077 P. R. China;4. School of Microelectronics, University of Science and Technology of China, Hefei, 230026 P. R. China

Key Laboratory of Wireless-Optical Communications, Chinese Academy of Sciences, School of Information Science and Technology, University of Science and Technology of China, Hefei, 230027 P. R. China;5. School of Microelectronics, Wuhan University, Wuhan, 430072 P. R. China

Abstract:Underwater optical communication (UOC) has attracted considerable interest in the continuous expansion of human activities in marine/ocean environments. The water-durable and self-powered photoelectrodes that act as a battery-free light receiver in UOC are particularly crucial, as they may directly face complex underwater conditions. Emerging photoelectrochemical (PEC)-type photodetectors are appealing owing to their intrinsic aqueous operation characteristics with versatile tunability of photoresponses. Herein, a self-powered PEC photodetector employing n-type gallium nitride (GaN) nanowires as a photoelectrode, which is decorated with an iridium oxide (IrOx) layer to optimize charge transfer dynamics at the GaN/electrolyte interface, is reported. Strikingly, the constructed n-GaN/IrOx photoelectrode breaks the responsivity-bandwidth trade-off limit by simultaneously improving the response speed and responsivity, delivering an ultrafast response speed with response/recovery times of only 2 µs/4 µs while achieving a high responsivity of 110.1 mA W?1. Importantly, the device exhibits a large bandwidth with 3 dB cutoff frequency exceeding 100 kHz in UOC tests, which is one of the highest values among self-powered photodetectors employed in optical communication system.
Keywords:gallium nitride nanowires  photoelectrodes  responsivity-bandwidth trade-off  surface decoration  underwater optical communication
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号