| 高温AlN为模板的AlGaN基p-i-n背照式日光盲探测器 |
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| 引用本文： | 邹泽亚,杨谟华,刘挺,赵文伯,赵红,罗木昌,王振.高温AlN为模板的AlGaN基p-i-n背照式日光盲探测器[J].半导体学报,2008,29(1):20-23. |
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| 作者姓名： | 邹泽亚 杨谟华 刘挺 赵文伯 赵红 罗木昌 王振 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,成都 610054；重庆光电技术研究所,重庆 400060;电子科技大学电子薄膜与集成器件国家重点实验室,成都 610054;重庆光电技术研究所,重庆 400060;重庆光电技术研究所,重庆 400060;重庆光电技术研究所,重庆 400060;重庆光电技术研究所,重庆 400060;重庆光电技术研究所,重庆 400060 |
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| 摘 要： | 第一次报道了以高温AlN为模板层的AlGaN基p-i-n背照式日光盲探测器的制作和器件特性.利用MOCVD方法在(0001)面的蓝宝石衬底上生长了探测器的AlxGa1-xN多层外延材料.在无需核化层的高温AlN模板上生长了p-i-n背照式日光盲探测器的无裂纹高Al组分(0.7)AlGaN多层外延结构.利用在线反射监测仪、三轴X射线衍射及原子力显微镜表征了外延材料的晶体质量.在1.8V的反向偏压下,制作的探测器表现出了日光盲响应特性,在270nm处最大响应度为0.0864A/W.具有约3.5V的正向开启电压,大于20V的反向击穿电压,在2V的反向偏压下暗电流小于20pA.
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| 关 键 词： | 日光盲 高温AlN模板 背照式探测器 p-i-n solar-blind high temperature AlN template back-illuminated photodetector p-i-n |
| 文章编号： | 0253-4177（2008）01-0020-04 |
| 收稿时间： | 6/24/2007 8:36:57 PM |
| 修稿时间： | 8/20/2007 2:45:58 PM |
A Solar-Blind AlGaN-Based p-i-n Back-Illuminated Photodetector with a High Temperature AlN Template Layer |
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| Zou Zey,Yang Mohu,Liu Ting,Zhao Wenbo,Zhao Hong,Luo Muchang and Wang Zhen.A Solar-Blind AlGaN-Based p-i-n Back-Illuminated Photodetector with a High Temperature AlN Template Layer[J].Chinese Journal of Semiconductors,2008,29(1):20-23. |
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| Authors: | Zou Zey Yang Mohu Liu Ting Zhao Wenbo Zhao Hong Luo Muchang and Wang Zhen |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China ;Chongqing Optoelectronics Research Institute,Chongqing 400060,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;Chongqing Optoelectronics Research Institute,Chongqing 400060,China;Chongqing Optoelectronics Research Institute,Chongqing 400060,China;Chongqing Optoelectronics Research Institute,Chongqing 400060,China;Chongqing Optoelectronics Research Institute,Chongqing 400060,China;Chongqing Optoelectronics Research Institute,Chongqing 400060,China |
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| Abstract: | The growth,fabrication,and characterization of a solar-blind AlGaN-based p-i-n back-illuminated photodetector with a high temperature AlN template are reported for the first time. The photodetector was fabricated from multilayer Alx Ga1-xN films grown by MOCVD on double-polished c-plane (0001) sapphire substrates. Crack free,high Al content (0.7) AlGaN multilayer structure,designed for the solar-blind p-i-n back-illuminated photodetector,was grown on a high temperature AlN template without a nuclear layer. The high quality of the epitaxial layers is demonstrated by in-situ optical reflectance monitoring curve, triple-axis X-ray diffraction, and atomic-force microscope. At a 1.8V bias, the processed p-i-n photodetector exhibits a solar-blind photoresponse with a maximum responsivity of 0. 0864A/W at 270nm. The photodetector exhibits a forward turn-on voltage at around 3.5V and a reverse breakdown voltage above 20V,and the leakage current is below 20pA for 2V reverse bias. |
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| Keywords: | solar-blind high temperature AlN template back-illuminated photodetector p-i-n |
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