Progress in MOVPE of HgCdTe for advanced infrared detectors

This paper reviews the significant progress made over the past five years in the development of metalorganic vapor phase epitaxy (MOVPE) for the in situ growth of HgCdTe p-n junction devices for infrared detector arrays. The two basic approaches for MOVPE growth of HgCdTe, the interdiffused multilayer process (IMP), and direct alloy growth (DAG) are compared. The paper then focuses on the progress achieved with the IMP approach on lattice-matched CdZnTe substrates. The benefits of the precursors ethyl iodide (EI) and tris-dimethylaminoarsenic (DMAAs) for controlled iodine donor doping and arsenic acceptor doping at dopant concentrations relevant for HgCdTe junction devices are summarized along with the electrical and lifetime properties of n-type and p-type HgCdTe films grown with these precursors. The relative merits of the two CdZnTe substrate orientations we have used, the (211)B and the (100) with 4°–8° misorientation are compared, and the reasons why the (211)B is preferred are discussed. The growth and repeatability results, based on secondary ion mass spectrometry analysis, are reported for a series of double-heterojunction p-n-N-P dual-band HgCdTe films for simultaneous detection in the 3–5 μm and 8–10 μm wavelength bands. Finally, the device characteristics of MOVPE-IMP in situ grown p-on-n heterojunction detectors operating in the 8–12 μm band are reviewed and compared with state-of-the-art liquid phase epitaxial grown devices.