Simulation, fabrication and characterization of a novel P-I-N-drainMOSFET structure for hot carrier suppression

A new P-I-N-drain MOSFET structure has been developed with very low (near-intrinsic) doping (10¹⁵-10¹⁶ cm^-3 in our case) in the channel near the source/drain ends. The new structure is more effective in reducing the peak electric field at the channel/drain junction than LDD structures, and hence results in better hot carrier suppression. Also, simulations show that the near-intrinsic region near the drain reduces the transverse electric field and gives rise to higher carrier mobility and drive current. Experimental results show that, with the new structure, the substrate current and oxide charging due to hot-carrier injection are greatly reduced