直流反应溅射TiO2薄膜的制备及其性能研究

采用直流反应磁控溅射的方法,溅射高纯钛靶在ITO石英衬底上制备了TiO2薄膜.用XRD、Raman光谱、AFM和紫外-可见光分光光度计分别测试了TiO2薄膜的结构、表面形貌和紫外-可见光透射谱,研究了工艺因素中溅射气压、氧氩比和退火温度对薄膜结构的影响.采用C(胶)/TiO2/ITO三层结构研究了锐钛矿TiO2薄膜的紫外光响应.实验结果表明较低的溅射气压、合适的氧氩比和较高的退火温度有利于锐钛矿TiO2薄膜的结晶.在2 V的偏压下,锐钛矿TiO2薄膜的紫外光响应上升迟豫时间约为3 s,稳定光电流可达到2.1 mA,对紫外光的灵敏性和稳定的光响应表明TiO2薄膜有可能成为一种新的紫外光探测器材料.

Growth and properties of titanium dioxide film by DC reactive magnetron sputtering

TiO_2 thin films were deposited on ITO, which has been deposited on quartz substrate, by way of DC reactive magnetron sputtering. The microstructure, surface morphology and UV-visible absorption spectrum of the films were investigated by X-ray diffraction, Raman spectroscopy, AFM and UV-3150 spectrophotometer, thus analyzing the effects of growth conditions, such as sputtering pressure, the O_2/Ar ratio and annealing temperature on the microstructure of TiO_2 thin films. The photoconductivity of anatase TiO_2 thin films was investigated using a sandwich structure of C(glue)/ TiO_2/ITO. The experimental results showed that lower sputtering pressure, appropriate O_2/Ar ratio and relatively high annealing temperature are beneficial to the crystallization of TiO_2 thin films. The time for relaxation rise of photoresponse and the stable photocurrent of anatase TiO_2 thin films were measured to be 3s and 2.1 ma at 2V bais votage, respectively. The sensitivity and stability of the photoresponse indicated that it is possible for TiO_2 thin films to be a new UV detector material.