| LOW TEMPERATURE OPEN TUBE Zn DIFFUSION IN InP/InGaAs(P) |
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| 引用本文： | 李维旦,潘慧珍. LOW TEMPERATURE OPEN TUBE Zn DIFFUSION IN InP/InGaAs(P)[J]. 电子科学学刊(英文版), 1988, 5(3): 233-238. DOI: 10.1007/BF02778790 |
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| 作者姓名： | 李维旦 潘慧珍 |
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| 作者单位： | Shanghai Institute of Metallurgy Academia Sinica，Shanghai，Shanghai Institute of Metallurgy，Academia Sinica，Shanghai |
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| 摘 要： | To fabricate quasi-planar optoelectronic integrated circuits(OEICs),a new open tube Zndiffusion method has been developed.The characteristics of Zn diffusion in InP/InGaAs(P)heterostrueturematerials at comparatively low temperature have been studied,and it has been found for the first time that Zndiffusion rate is proportional to the square of phosphorus content of the InGaAsP materials.
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Low temperature open tube Zn diffusion in InP/InGaAs(P) |
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| Li Weidan,Pan Huizhen. Low temperature open tube Zn diffusion in InP/InGaAs(P)[J]. Journal of Electronics, 1988, 5(3): 233-238. DOI: 10.1007/BF02778790 |
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| Authors: | Li Weidan Pan Huizhen |
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| Affiliation: | (1) Shanghai Institute of Metallurgy, Academia Sinica, Shanghai |
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| Abstract: | To fabricate quasi-planar optoelectronic integrated circuits(OEICs),a new open tube Zn diffusion method has been developed.The characteristics of Zn diffusion in InP/InGaAs(P)heterostrueture materials at comparatively low temperature have been studied,and it has been found for the first time that Zn diffusion rate is proportional to the square of phosphorus content of the InGaAsP materials. |
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| Keywords: | Diffusion Open tube Zn diffusion InP/InGaAs(P) OEIC fabrication |
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