| 杂质非完全离化对SiC n-MOSFET电特性的影响 |
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| 引用本文： | 李春霞,徐静平,吴海平,黎沛涛.杂质非完全离化对SiC n-MOSFET电特性的影响[J].微电子学,2005,35(5):470-473. |
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| 作者姓名： | 李春霞 徐静平 吴海平 黎沛涛 |
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| 作者单位： | [1]华中科技大学电子科学与技术系,湖北武汉430074 [2]香港大学电机电子工程系,中国香港 |
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| 摘 要： | 文章研究了SiC中杂质非完全离化对器件性能的影响.通过考虑场致离化效应,分析了空间电荷区电荷密度与表面势的关系,得出在SiC MOSFET反型条件下,可近似认为杂质完全离化.在此基础上,模拟了4H-SiC MOSFET的漏电流-栅压曲线和迁移率-栅压曲线.模拟结果与实验数据非常吻合.
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| 关 键 词： | 碳化硅 MOS场效应晶体管 杂质离化 迁移率 |
| 文章编号： | 1004-3365（2005）05-0470-04 |
| 收稿时间： | 2005-01-14 |
| 修稿时间： | 2005-01-142005-03-29 |
Effect of Incomplete Ionization on Electrical Properties of SiC n-MOSFET's |
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| LI Chun-xia , XU Jing-ping , WU Hal-ping, P. T. Lai.Effect of Incomplete Ionization on Electrical Properties of SiC n-MOSFET''''s[J].Microelectronics,2005,35(5):470-473. |
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| Authors: | LI Chun-xia XU Jing-ping WU Hal-ping P T Lai |
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| Affiliation: | LI Chun-xia , XU Jing-ping , WU Hal-ping, P. T. Lai (1. Dept. Elec. Sci. |
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| Abstract: | Considering the effect of incomplete ionization on the performance of SiC MOSFET's,the relationship between surface charge density and surface potential is analyzed.It is concluded that,in the inversion region,impurity can be considered as fully ionized.Based on the study,both drain current and mobility of 4H-SiC MOSFET's are simulated.The simulation result matches well with experimental data. |
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| Keywords: | SiC MOSFET Impurity ionization Mobility |
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