Stacked Josephson junction based on Nb/Si superlattice

We report on the technology and basic electrical properties of ten-fold stacked Nb/Si/Nb Josephson junction (JJ). The problem of making a large number of stacked JJs with identical properties was solved by metallic superlattice preparation technology. The uniformity of Si barriers thickness was examined by low angle X-ray diffraction and cross-sectional transmission electron microscopy. To prevent pinholes in the Si barriers the Nb/Si superlattice was sputtered at the regime at which smoothing of interfacial roughness occurs. The stacked junction exhibit both ac and dc Josephson effects. In the I_c(B) diffraction pattern there is an extra periodicity of about 2–3 G in addition to a larger period of about 21 G.