Controlled Surface Flaws in Hot-Pressed Si3N4

Surface flaws of controlled size and shape were produced in high-strength hot-pressed Si₃N₄ with a Knoop microhardness indenter. Fracture was initiated at a single suitably oriented flaw on the tensile surface of a 4-point-bend specimen, with attendant reduction in the measured magnitude and scatter of the fracture strength. The stress required to propagate the controlled flaw was used to calculate the critical stress-intensity factor, K _IC, from standard fracture-mechanics formulas for semielliptical surface flaws in bending. After the bend specimen had been annealed, the room-temperature K _IC values for HS-130 Si₃N₄ increased to a level consistent with values obtained from conventional fracture-mechanics tests. It was postulated that annealing reduces the residual stresses produced by the microhardness indentation. The presence of residual stresses may account for the low K _IC, values. Elevated-temperature K_IC values for HS-130 Si₃N₄ were consistent with double-torsion data. Controlled flaws in HS-130 Si₃N₄ exhibited slow crack growth at high temperatures.