Monolithic integration of a high-performance clustered insulated gate bipolar transistor with low-voltage components to form a 3 kV intelligent power chip

For the first time, we evaluate the feasibility of monolithic integration of low-voltage components, such as n and p channel MOSFETs, into a 3 kV novel planar power semiconductor device, called the clustered insulated gate bipolar transistor, to realise an intelligent power chip. The power device employs MOS control with a thyristor to lower the on-state conduction losses and a unique self-clamping feature that provides current saturation at high gate voltages and enables the incorporation of low-voltage devices without any additional processing. This combination paves the way for realising an intelligent power chip with enhanced performance with respect to on-chip temperature, over-current and over-voltage protection circuitry.