| 非掺半绝缘GaAs单晶的垂直梯度凝固生长 |
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| 引用本文： | 赵福川,谈惠祖,杜立新,莫培根.非掺半绝缘GaAs单晶的垂直梯度凝固生长[J].功能材料与器件学报,2000,6(2):125-128. |
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| 作者姓名： | 赵福川 谈惠祖 杜立新 莫培根 |
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| 作者单位： | 中国科学院上海冶金研究所,上海,200050 |
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| 摘 要： | 研究了非掺ＧａＡｓ半绝缘单晶的液封垂直梯度凝固法（ＶＧＦ）生长技术,解决了Ｓｉ沾污和Ｃ浓度的控制问题,得到了直径２英寸非掺半绝缘低位错单晶。测试表明：该单晶的位错密度较ＬＥＣ单晶下降近一个数量级,电学参数与ＬＥＣ单晶类似,接近国个ＶＧＦ单晶的的参数指标。
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| 关 键 词： | 垂直凝固 晶体生长 非掺半绝缘砷化镓单晶 |
| 修稿时间： | 1999－04－30 |
VERTICAL GRADIENT FREEZE GROWTH OF UNDOPED SEMI-INSULATING GaAs CRYSTALS |
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| ZHAO Fu-chuan,TAN Hui-zu,DU Li-xin,MO Pei-gen.VERTICAL GRADIENT FREEZE GROWTH OF UNDOPED SEMI-INSULATING GaAs CRYSTALS[J].Journal of Functional Materials and Devices,2000,6(2):125-128. |
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| Authors: | ZHAO Fu-chuan TAN Hui-zu DU Li-xin MO Pei-gen |
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| Abstract: | Total liquid encapsulated vertical gradient freeze (VGF) method has been used to grow undoped semi-insulating (SI) GaAs crystals. The impurities such as silicon and carbon have been well controlled in the growth process. As a result, a 2" diameter undoped SI GaAs single crystal was achieved. Materials characterization tests demonstrated the Hall parameters of the crystal close to that of LEC crystal, and dislocation densities of 8600cm-2, about one order of magnitude lower than dislocation densities of LEC crystals. |
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| Keywords: | Vertical gradient freeze (VGF) Semi-insulating GaAs crystal Crystal growth |
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