| InGaAs(InAlAs)/InP和InP/InAlAs湿法选择腐蚀研究 |
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| 引用本文： | 赵永林,蔡道明,周州,郭亚娜,刘跳. InGaAs(InAlAs)/InP和InP/InAlAs湿法选择腐蚀研究[J]. 微纳电子技术, 2005, 42(11) |
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| 作者姓名： | 赵永林 蔡道明 周州 郭亚娜 刘跳 |
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| 摘 要： | 介绍了两种选择腐蚀液对InGaAs(InAlAs)I/nP和InPI/nAlAs异质结构材料选择腐蚀的实验结果,重点介绍在InAlAs上面生长InP的湿法选择腐蚀,用HClH∶3PO4C∶H3COOH系列腐蚀液,InPI/nAlAs选择比大于300。InPI/nAlAs湿法选择腐蚀的结果可以很好应用到OEIC芯片制作中,并取得了较好的器件及电路结果。
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| 关 键 词： | 湿法选择腐蚀 选择比 InPI/nAlAs 光电子集成电路 |
Research on Wet Selective Etching of InGaAs (InAlAs) /InP and InP/InAlAs |
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| ZHAO Yong-lin,CAI Dao-ming,ZHOU Zhou,GUO Ya-na,LIU Tiao. Research on Wet Selective Etching of InGaAs (InAlAs) /InP and InP/InAlAs[J]. Micronanoelectronic Technology, 2005, 42(11) |
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| Authors: | ZHAO Yong-lin CAI Dao-ming ZHOU Zhou GUO Ya-na LIU Tiao |
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| Abstract: | The result of two solutions about the selective etching of InGaAs(InAlAs)/InP and InP/InAlAs heterostructures was reported.The wet selective etching of InP over InAlAs by HCl:H3PO4:CH3COOH solution was mainly introduced.The selectivity of InP/InAlAs is above 300.The result of InP/InAlAs wet selective etching was used in the fabricating of related OEICs and good results for devices and circuits was obtained. |
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| Keywords: | wet selective etching selectivity InP/InAlAs OEIC |
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