The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition |
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Authors: | B.L. Zhu X.H. Sun F.H. Su X.G. Wu R. Wu |
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Affiliation: | a Key Laboratory of Hubei Province for Ceramics and Refractories or Nanomaterials Center, Wuhan University of Science and Technology, Wuhan 430081, People's Republic of China b Department of Physics, Wuhan University, Hubei, Wuhan 430072, People's Republic of China c National Laboratory for Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China |
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Abstract: | ZnO thin films were prepared by pulsed laser deposition (PLD) on glass substrates with growth temperature from room temperature (RT) to 500 °C. The effects of substrate temperature on the structural and optical properties of ZnO films have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission spectra, and RT photoluminescence (PL) measurements. The results showed that crystalline and (0 0 2)-oriented ZnO films were obtained at all substrate temperatures. As the substrate temperature increased from RT to 500 °C, the ratio of grain size in height direction to that in the lateral direction gradually decreased. The same grain size in two directions was obtained at 200 °C, and the size was smallest in all samples, which may result in maximum Eg and E0 of the films. UV emission was observed only in the films grown at 200 °C, which is probably because the stoichiometry of ZnO films was improved at a suitable substrate temperature. It was suggested that the UV emission might be related to the stoichiometry in the ZnO film rather than the grain size of the thin film. |
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Keywords: | PLD ZnO films Substrate temperature Crystal quality Grain size Optical properties |
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