SiOx-doped DLC films: Charge transport, dielectric properties and structure |
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| Authors: | Š Meškinis K Šlapikas S Tamulevi?ius A Guobien? |
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| Affiliation: | a Institute of Physical Electronics of Kaunas University of Technology, Savanori? 271, 50131 Kaunas, Lithuania
b Institute of Chemistry, Goštauto 9, Vilnius, Lithuania |
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| Abstract: | In the present study, SiOx-doped diamond-like carbon (DLC) films were synthesized by ion beam deposition on different substrates. Electrical properties, morphology and structure of the DLC films were investigated. Poole-Frenkel emission was the main carrier transport mechanism in all investigated metal-SiOx-doped DLC-metal samples. Dielectric properties of the samples were dependent on both the bottom and top electrode metal. The trans-polyacetylene chain vibrations detected from the Raman spectra have been observed for all the SiOx-doped DLC films. Different dielectric properties of the film deposited onto the different metal interlayers were explained both by different roughness of the metal films and by different structure of the ion beam-synthesized SiOx-doped DLC films. |
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| Keywords: | SiOx-doped DLC films Charge transport mechanisms Dielectric properties Raman scattering spectra AFM |
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