热壁化学气相沉积Si基GaN晶体膜的研究

采用热壁化学气相沉积工艺在Si(111)衬底上生长GaN晶体膜，并对其生长条件进行研究。用X射线衍射(XRD)、扫描电镜(SEM)、荧光光谱(PL)对样品进行结构、形貌和发光特性的分析。测试结果表明：用此方法得到了六方纤锌矿结构的GaN晶体膜。实验结果显示：采用该工艺制备GaN晶体膜时，选择H2作反应气体兼载体，对GaN膜的形成起着非常有利的作用。

The Investigation of GaN Films Grown on Si Substrates by Hot-Wall Chemical Vapor Deposition

GaN films on Si substrates were obtained by hot-wall chemical vapor deposition and the growth condition during the process was investigated. The structure, surface morphology and the optical properties were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL). It indicated that hexagonal wurtzite GaN films were obtained on Si substrates. Preliminary results suggest that H2 as carrier gas play an important role at the same temperature in the growth of GaN films.