The effect of Auger mechanism on n+-p GaInAsSb infraredphotovoltaic detectors |
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| Authors: | Yuan Tian Tianming Zhou Baolin Zhang Hong Jiang Yixin Jin |
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| Affiliation: | Inst. of Phys., Acad. Sinica, Changchun; |
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| Abstract: | In this paper, the theoretical analysis of the Auger mechanism in n+-p GaInAsSb infrared photovoltaic detectors is reported. The lifetime caused by the Auger mechanism is calculated depending on the compositions, temperature, and carrier concentration. We also analyze the effect of material parameters on the detectivity of the n +-p GaInAsSb detectors. The calculated results show that the Auger mechanism could be suppressed by optimizing the material parameters, so that the performance of GaInAsSb infrared photovoltaic detectors is improved |
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