| GaN材料生长研究 |
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| 引用本文： | 章其麟,孙文红,刘燕飞,毕书亮,耿金花,秦国刚. GaN材料生长研究[J]. 微纳电子技术, 1997, 0(5) |
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| 作者姓名： | 章其麟 孙文红 刘燕飞 毕书亮 耿金花 秦国刚 |
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| 作者单位： | 电子工业部第十三研究所，北京大学物理系 |
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| 摘 要： | 用常压ＭＯＣＶＤ方法我们在蓝宝石（０００１）、Ｓｉ（１１１）衬底上，成功地制备出ＧａＮ单晶薄膜材料，取得了ＧａＮ材料的初步测试结果。纯度ＧａＮ为ｎ型，载流子浓度为１０１７～１０１８ｃｍ－３，迁移率为２００～３５０ｃｍ２／Ｖ·ｓ，双晶衍射半峰宽为７′，室温ＰＬ光谱本征发光波长为３７０ｎｍ，并首次观察到掺ＺｎＧａＮ呈ｐ型电导。
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| 关 键 词： | 氮化镓 发光二极管 |
Study on Growth of GaN Material |
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| Zhang Qilin,Sun Wenhong,Liu Yanfei,Bi Shuliang,Geng Jinhua. Study on Growth of GaN Material[J]. Micronanoelectronic Technology, 1997, 0(5) |
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| Authors: | Zhang Qilin Sun Wenhong Liu Yanfei Bi Shuliang Geng Jinhua |
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| Abstract: | The single crystal GaN films were prepared by APMOCVD on sappier(0001)and Si(111)substrates.They exhibited n type intrinsic conduction,their concentration,Hall mobility and FWHM of double crystal diffraction were 10 17 ～10 18 cm 3,200～350cm 2/V·s and 7′.respectively.The RT PL spectra result of pure GaN showed that there was a band edge peak at 370nm,It is the first time that we have observed the p type conduct of Zn doped GaN material. |
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| Keywords: | GaN Light emitting diodes |
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