A shallow buried-layer formation technique utilizing diffusion fromimplanted polysilicon layer |
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Authors: | O KK Lee H-S Reif R Frank W Metz W Gillis T |
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Affiliation: | Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA; |
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Abstract: | A shallow buried-layer (0.25~0.50 μm) formation technique utilizing diffusion from an arsenic-implanted polysilicon layer is discussed. The polysilicon layer is removed by converting it into an oxide layer and wet etching the oxide layer. Vertical n-p-n bipolar transistors are fabricated on epitaxial layers deposited on buried layers formed utilizing this technique. The transistor characteristics indicate that high-quality epitaxial layers can be grown on these buried layers. Using this technique, a buried layer with a sheet resistance of 28 Ω/□ and a junction depth of ~0.4 μm was obtained (prior to the epitaxial growth) |
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