| SiCw在Al2O3—C复合耐火材料中的原位生长 |
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| 引用本文： | 陈卫武,邹宗树.SiCw在Al2O3—C复合耐火材料中的原位生长[J].硅酸盐学报,1998,26(1):124-128. |
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| 作者姓名： | 陈卫武 邹宗树 |
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| 作者单位： | 东北大学钢铁冶金系，鞍钢耐火公司 |
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| 基金项目： | 冶金工业部基础性研究项目 |
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| 摘 要： | 通过引入金属Ｓｉ和活性Ｃ对ＳｉＣ晶须在Ａｌ２Ｏ３－Ｃ复合耐火材料中的原位生长进行了实验研究，利用ＳＥＭ结合电子探针（ＥＰＭＡ）研究了ＳｉＣｗ在Ａｌ２Ｏ３－Ｃ复合耐火材料中的原位生长机理，提出了液－固生长机理，并讨论了其热力学和动力学条件．
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| 关 键 词： | 铝碳质 耐火材料 碳化硅晶须 原位生长 强度 |
IN-SITU GROWTH OF SiC w IN Al 2O 3-C REFRACTORY MATERIALS |
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| Chen Weiwu,Zou Zongshu,Wang Tianming.IN-SITU GROWTH OF SiC w IN Al 2O 3-C REFRACTORY MATERIALS[J].Journal of The Chinese Ceramic Society,1998,26(1):124-128. |
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| Authors: | Chen Weiwu Zou Zongshu Wang Tianming |
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| Abstract: | In_situ growth of SiC w was formed by adding some silicon and active carbon in Al 2O 3-C refractory materials. The growth mechanism was studied by means of SEM and EPMA. A new growth mechanism, L-S(liquid-solid) mechanism, is proposed. The thermodynamic and dynamic conditions are also discussed in this paper. |
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| Keywords: | alumina-carbon refractory silicon carbide whiskers in_situ growth mechanism |
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