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PECVD法硅基氮化硅薄膜的制备及其耐磨性研究
引用本文:王大刚,张德坤.PECVD法硅基氮化硅薄膜的制备及其耐磨性研究[J].润滑与密封,2009,34(3).
作者姓名:王大刚  张德坤
作者单位:1. 中国矿业大学机电工程学院,江苏徐州,221116;摩擦学国家重点实验室生物摩擦学中心,北京,100086
2. 中国矿业大学材料科学与工程学院,江苏徐州,221116;摩擦学国家重点实验室生物摩擦学中心,北京,100086
基金项目:国家自然科学基金,国家重点基础研究发展规划(973计划),教育部新世纪优秀人才支持计划 
摘    要:以N(111) 型的单晶硅片为基体,运用PECVD-2D等离子体化学气相淀积台在单晶硅片表面沉积氮化硅薄膜,通过薄膜颜色与厚度间的关系探讨了制备工艺参数对薄膜厚度的影响,用原位纳米力学测试系统对氮化硅薄膜的纳米硬度进行测定,在UMT-2型摩擦试验机上对不同制备工艺的硅基氮化硅薄膜进行耐磨寿命试验.结果表明:随着沉积温度的升高,薄膜厚度逐渐递减,SiH4和N2流量比越大,薄膜厚度越大;温度越高,薄膜硬度越大,耐磨寿命越长;随着SiH4和N2流量比的增加,薄膜硬度和耐磨寿命均先增加后减小.

关 键 词:单晶硅  氮化硅  薄膜厚度  纳米硬度  耐磨寿命

Preparation of Silicon-based Silicon Nitride Films by PECVD and Research on the Wearing Properties
Wang Dagang,Zhang Dekun.Preparation of Silicon-based Silicon Nitride Films by PECVD and Research on the Wearing Properties[J].Lubrication Engineering,2009,34(3).
Authors:Wang Dagang  Zhang Dekun
Affiliation:1.College of Mechanical and Electrical Engineering;China University of Mining and Technology;Xuzhou Jiangsu 221116;China;2.College of Materials Science and Engineering;3.Biotribology Center of National Key Laboratory of Tribology;Beijing 100086;China
Abstract:Single crystal silicon wafers with crystal direction of(111) were chosen as the substrates.Silicon nitride films were deposited on single crystal silicon surfaces using the PECVD-2D plasma chemical vapor deposition system.The influence of preparation technology parameters on film thicknesses was discussed from the relationship between film colors and film thicknesses.Nano-hardness of silicon nitride films were measured with the TriboIndenter in the nano-scale mechanical property test system.Wear life tests ...
Keywords:single crystal silicon  silicon nitride  film thickness  nano-hardness  wear life  
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