Solution of the problem of charge-carrier injection into an insulating layer under self-consistent boundary conditions at contacts |
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Authors: | V I Shashkin N V Vostokov |
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Affiliation: | (1) Institute of Physics of Microstructures of the Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia |
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Abstract: | The problem of charge carrier injection into a finite-length insulating layer is analytically solved in the drift-diffusion approximation, taking into account self-consistent boundary conditions. The main assumption is the neglect of intrinsic doping of the i-type layer. The solution allows calculation of the potential, electric field, and current-voltage characteristics of various structures, i.e., metal-i-n + (or p +)-semiconductor, metal-i-layer-metal, and n +(p +)-i-n +(p +) structures. The solution allows generalization for structures having heterobarriers at semiconductor layer interfaces. The proposed approach considers contact phenomena and volume effects associated with the space-charge-limited current in the i-type layer. The solution is valid in both extreme cases and intermediate conditions. |
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