Effects of illumination during anodization of porous silicon |
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| Authors: | C Tsai K -H Li J C Campbell B K Hance M F Arendt J M White S -L Yau A J Bard |
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| Affiliation: | (1) Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712 Austin, Texas;(2) Department of Chemistry and Biochemistry, The University of Texas at Austin, 78712 Austin, TX |
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| Abstract: | The effects of illumination during anodic etching of porous Si have been studied. For a fixed current density and anodization
time, it has been observed that below a critical irradiance level, increasing the radiant flux density during anodization
results in higher photoluminescence and a blue shift of the photoluminescence spectra. For irradiance above the critical value,
the photoluminescence intensity decreases. Transmission Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy
and atomic force microscopy have been employed to investigate the effects of illumination on the characteristics of porous
Si. |
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| Keywords: | Porous Si photoluminescence illumination effect |
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