铌酸锂M-Z电光强度调制器光辐射模研究

铌酸锂马赫-曾德尔(M-Z)电光强度调制器光辐射模与光纤耦合是导致芯片与光纤组件耦合失效的主要原因。采用光纤与芯片高精度耦合扫描法对光波导和光辐射模进行扫描，研究了光辐射模中心位置分布、光辐射模输出光功率随偏置电压的变化特性，以及光辐射模、光波导与光纤耦合光能量的分布特性。测得光波导在X,Y方向的有效耦合范围分别为14～15.5μm和14～16μm,光辐射模在X,Y方向的有效耦合范围分别为89～92μm和92～96μm。根据所研究的光辐射模特性，制定了失效耦合的解决方案，解决了光辐射模耦合失效问题。

Study on the Radiation-Mode Light of the Lithium Niobate Electric-optical Intensity Modulator with M-Z Optical Waveguide

The radiation-mode light radiated from an M-Z optical waveguide may couple with the fiber, and this is the main factor leading to failure of the high-precision coupling between a chip and the fiber array. This study used fiber to scan the waveguide and radiation-mode light with a high-precision coupling method and studied the center position of the radiation-mode light regions, the characteristics of the radiation-mode light power that changed with the bias voltage, and the power distribution characteristics of the waveguide and radiation-mode light scanned by the fiber. The effective coupling ranges of the waveguide in the X and Y directions were 14~15.5 and 14~16μm, respectively, and the effective coupling ranges of the radiation-mode light in the X and Y directions were 89~92 and 92~96μm, respectively. The study investigated the characteristics of the radiation-mode light to formulate the correct solution and solve the coupling failure caused by radiation-mode light.