Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering |
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| Affiliation: | 1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;2. JSPS Research Fellow, 8 Ichiban-cho, Chiyoda-ku, Tokyo 102-8472, Japan;1. Center for Space Human Robotics@PoliTo, Istituto Italiano di Tecnologia, Corso Trento 21, 10129 Torino, Italy;2. Department of Energy, Information Engineering and Mathematical Models (DEIM), Thin Films Laboratory, Università di Palermo, Viale delle Scienze, Building 9, 90128 Palermo, Italy;3. Applied Science and Technology Department (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy |
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| Abstract: | The Yb:Er co-doped Al2O3 thin film was deposited on oxidized silicon wafers by microwave ECR plasma source enhanced RF magnetron sputtering, and annealed from 800 °C to 1000 °C. The photoluminescence at 1.53 μm of thin film was obtained under room temperature. The mixture phase structure of γ and θ is observed by XRD, and the compositions of the thin film are investigated by EPMA. The maximum PL intensity was achieved with O2:Ar at 1:1, annealing temperature at 900 °C, and experimental ratio of Yb:Er at 1:3.6. The energy transfer mechanism between Er and Yb ions is supported by theoretical analysis and experiment results. |
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