Two-dimensional simulation of ferroelectric memory cells |
| |
Authors: | Dragosits K Selberherr S |
| |
Affiliation: | Inst. for Microelectron., Tech. Univ. Wien; |
| |
Abstract: | An approach to increase the capabilities of integrated circuit nonvolatile memory is to take advantage of the hysteresis in the polarization of ferroelectric materials. For a rigorous analysis of the resulting devices, a suitable model for the ferroelectric effects has been developed. We present this model and show the results of its implementation into a device simulator. Although this model was designed especially for analysis of ferroelectric materials, it is also applicable to magnetic hysteresis phenomena |
| |
Keywords: | |
|
|