| GaN单片功率集成电路研究进展 |
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| 引用本文： | 赖静雪,陈万军,孙瑞泽,刘超,张波. GaN单片功率集成电路研究进展[J]. 电子与封装, 2021, 21(2): 24-35 |
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| 作者姓名： | 赖静雪 陈万军 孙瑞泽 刘超 张波 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,成都610054;电子科技大学电子薄膜与集成器件国家重点实验室,成都610054;电子科技大学电子薄膜与集成器件国家重点实验室,成都610054;电子科技大学电子薄膜与集成器件国家重点实验室,成都610054;电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 |
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| 基金项目： | 国家自然科学基金(62004030)。 |
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| 摘 要： | GaN高电子迁移率晶体管(HEMT)器件具有工作频率高、导通损耗小等优点,已经开始广泛应用在多种高频、高效功率转换器中,而拥有更高集成度的全GaN单片集成电路可进一步提高基于GaN HEMT器件功率变换器的性能.介绍了不同类型的全GaN集成工艺平台以及GaN功能子电路的研究进展,并对全GaN单片集成功率IC的研究现状进...
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| 关 键 词： | AlGaN/GaN HEMT 全氮化镓 变换器IC 单片集成 功率变换 |
Development of GaN Monolithic Power Integrated Circuits |
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| LAI Jingxue,CHEN Wanjun,SUN Ruize,LIU Chao,ZHANG Bo. Development of GaN Monolithic Power Integrated Circuits[J]. Electronics & Packaging, 2021, 21(2): 24-35 |
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| Authors: | LAI Jingxue CHEN Wanjun SUN Ruize LIU Chao ZHANG Bo |
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| Affiliation: | (State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | GaN HEMT devices,which have excellent features such as high breakdown voltage and low on-resistance,have been widely applied in high voltage,high frequency and high efficiency power converters.Higher integration of all-GaN monolithic IC can further improve the performance of power converters based on GaN HEMT.This article introduces several all-GaN integration platforms and basic GaN functional subcircuits,then the research status of all-GaN monolithic integrated power converter are reviewed. |
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| Keywords: | AlGaN/GaN HEMT all-GaN converter IC monolithic integration power conversion |
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