Vacancy-type defect production in CLAM steel after the co-implantation of He and H ion beams studied by positron-annihilation spectroscopy |
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| Authors: | Yong Xin Xin Ju Jie Qiu Liping Guo Tiecheng Li Fengfeng Luo Peng Zhang Xingzhong Cao Baoyi Wang |
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| Affiliation: | 1. Department of Physics, University of Science and Technology Beijing, Beijing 100083, PR China;2. Nuclear Engineering Program, The Ohio State University, Columbus, OH 43210, USA;3. Accelarator Laboratories, School of Physics, Wuhan University, Wuhan, Hubei 430072, PR China;4. Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, PR China;1. Kharkov Institute of Physics and Technology, 61108 Kharkov, Ukraine;2. Radiation Effects Consulting, Richland, WA 99354, USA;1. European Commission, Joint Research Centre, Institute for Energy and Transport, P.O. Box 2, 1755 ZG Petten, The Netherlands;2. Lund University, Division of Materials Engineering, P.O. Box 118, SE-221 00 Lund, Sweden;3. Institute of Structural Materials, College of Engineering, Swansea University, Singleton Park, Swansea, SA2 8PP, UK;1. Research Reactor Institute, Kyoto University, Osaka 590-0494, Japan;2. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;3. Research Institute for Applied Mechanics, Kyushu University, Fukuoka 816-8580, Japan;1. Department of Nuclear Engineering, University of California, Berkeley, CA 94720-1730, USA;2. Department of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996-2300, USA;1. Technische Universität Dresden, Institute for Solid Mechanics, 01062 Dresden, Germany;2. Technische Universität Bergakademie Freiberg, Institute of Mechanics and Fluid Dynamics, Lampadiusstrasse 4, 09596 Freiberg, Germany;3. Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01328 Dresden, Germany |
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| Abstract: | Vacancy-type defects induced by the co-implantation of He and H ions in China low activation martensitic (CLAM) steel at room temperature were investigated by variable-energy position beam Doppler broadening spectra (DBS). The co-implantation occurred in two patterns. In one pattern, He ions were implanted before H ions; the other pattern was of the opposite sequence. Both He- and H-vacancy complexes were formed for pre-implanted He and H at different fluences. He–H-vacancy complexes were formed for pre-implanted He, which caused the S parameter of the pre-implanted He to be smaller than that of H at the lowest fluence. The defect density increased with increased fluence for the two implanted patterns, and the difference between the S parameters of pre-implanted H and He decreased with increased fluence. Nanovoids containing a few He atoms were the dominating defects at high implanted fluences for the two kinds of implantation. |
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