首页 | 本学科首页   官方微博 | 高级检索  
     

微波固态器件与单片微波集成电路技术的新发展
引用本文:周德金,黄伟,宁仁霞.微波固态器件与单片微波集成电路技术的新发展[J].电子与封装,2021,21(2):48-58.
作者姓名:周德金  黄伟  宁仁霞
作者单位:复旦大学微电子学院,上海200443;清华大学无锡应用技术研究院,江苏无锡214072;复旦大学微电子学院,上海200443;桂林电子科技大学广西精密导航技术与应用重点实验室,广西桂林541004;黄山学院信息工程学院智能微系统安徽省工程技术研究中心,安徽黄山245021
基金项目:广西精密导航技术与应用重点实验室开放基金(DH201913);安徽省重点研究与开发计划(201904b11020007)。
摘    要:对不同时代的单片微波集成电路(MMIC)的器件工艺发展和应用发展状况进行概况总结,并结合当前的研究与应用热点,重点分析以砷化镓(GaAs)、氮化镓(GaN)为代表的微波化合物固态器件和基于MMIC的异构异质集成新技术路径,并就今后发展的趋势做出展望.

关 键 词:微波单片集成电路  氮化镓  砷化镓  磷化铟  异质集成

Development of Microwave Solid State Devices and Microwave Monolithic Integrated Circuit Technology
ZHOU Dejin,HUANG Wei,NING Renxia.Development of Microwave Solid State Devices and Microwave Monolithic Integrated Circuit Technology[J].Electronics & Packaging,2021,21(2):48-58.
Authors:ZHOU Dejin  HUANG Wei  NING Renxia
Affiliation:(School of Microelectromics Fudan University,Shanghai 200443,China;Wuxi Research Institute of Applied Technologies,Tsinghua University,Wuxi 214072,China;Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin 541004,China;Engineering Technology Research Center of Intelligent Microsystems,Anhui Province,Huangshan University,Huangshan 245021,China)
Abstract:This paper introduces the development of microwave monolithic integrated circuit(MMIC).According to the current research hotspots,the research status of new structures of GaAs,GaN devices based on compound semiconductor and the research progress of heterogeneous integration technology about RF micro-system are put forward.Also the development trend in the future of MMIC is prospected.
Keywords:monolithic microwave integrated circuit  GaN  GaAs  InP  heterogeneous integration
本文献已被 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号