| GaN HEMT电力电子器件技术研究进展 |
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| 引用本文： | 鲍婕,周德金,陈珍海,宁仁霞,吴伟东,黄伟.GaN HEMT电力电子器件技术研究进展[J].电子与封装,2021,21(2). |
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| 作者姓名： | 鲍婕 周德金 陈珍海 宁仁霞 吴伟东 黄伟 |
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| 作者单位： | 黄山学院智能微系统安徽省工程技术研究中心,安徽黄山245041;多伦多大学电气与计算机工程学院,加拿大多伦多M5S3G4;复旦大学微电子学院,上海200443;清华大学无锡应用技术研究院,江苏无锡214072;黄山学院智能微系统安徽省工程技术研究中心,安徽黄山245041;清华大学无锡应用技术研究院,江苏无锡214072;黄山学院智能微系统安徽省工程技术研究中心,安徽黄山245041;多伦多大学电气与计算机工程学院,加拿大多伦多M5S3G4;复旦大学微电子学院,上海200443 |
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| 基金项目： | 安徽省科技重大专项(18030901006);安徽省高校优秀青年骨干人才国内外访问研修项目(gxgwfx2019054);安徽省重点研究与开发计划项目(201904b11020007)。 |
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| 摘 要： | GaN高电子迁移率晶体管(HEMT)器件由于其击穿场强高、导通电阻低等优越的性能,在高达650 V额定电压等级的高效、高频转换器中有着广泛的应用前景。GaN HEMT器件的特性优势与其工艺结构、材料特性密切相关。介绍了耗尽型、增强型GaN HEMT的典型器件结构,并将国内外对结构设计以及材料优化等关键技术问题的研究现状进行了综述,并概括总结了GaN HEMT的技术发展趋势和最新参数指标。
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| 关 键 词： | GaN HEMT p-GaN 增强型 MIS-HEMT |
Research Progress of GaN HEMT Power Devices Technology |
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| BAO Jie,ZHOU Dejin,CHEN Zhenhai,NING Renxia,NG Wai,Tung,HUANG wei.Research Progress of GaN HEMT Power Devices Technology[J].Electronics & Packaging,2021,21(2). |
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| Authors: | BAO Jie ZHOU Dejin CHEN Zhenhai NING Renxia NG Wai Tung HUANG wei |
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| Affiliation: | (Engineering Technology Research Center of Intelligent Microsystems of Anhui Province,Huangshan University,Huangshan 245041,China;The Edward S.Rogers Sr.Department of Electrical and Computer Engineering,University of Toronto,Toronto M5S3G4,Canada;School of Microelectronics,Fudan University,Shanghai 200443,China;Wuxi Research Institute of Applied Technologies,Tsinghua University,Wuxi 214072,China) |
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| Abstract: | GaN HEMT(high electron mobility transistor)devices have a wide application prospect in high efficiency and high frequency converters with rated voltage up to 650 V,due to their excellent features such as high breakdown voltage and low on-resistance.The characteristic advantages of GaN HEMT devices are closely related to their structures and material properties.The typical device structures of depletion and enhancement GaN HEMT are introduced.The global research status of key technical issues about the structural design and material optimization are reviewed.Finally,the technology development trend and the latest parameters of GaN HEMT are summarized. |
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| Keywords: | GaN HEMT p-GaN enhancement mode MIS-HEMT |
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